Five companies including Alto, Maiyu, and Novovision announced new Micro LED patents

This week, companies such as Alto Electronics, Maiyun Display, Novo Technology, Weijiu Optoelectronics, and Haimixing Laser have successively announced the latest progress in Micro LED-related patents.

Involving Micro-LED display display, Micro LED chip packaging, Micro LED optical machinery, red Micro LED sidewall etching damage, full-color Micro LED device preparation, Micro LED chip transfer, etc., it is committed to improving Micro LED luminous performance, yield, display performance, etc.

■ Otto Electronics: An anti-photography method, system and Micro LED display

On February 27, Otto Electronics’ patent “An anti-photography method, system and Micro LED display” entered the effective authorization stage.

The method described in the invention includes: setting elements of the monitoring information, setting the confidentiality levels corresponding to the elements, and inputting the elements with the set confidentiality levels into the monitoring information database; monitoring the video display content in real time, performing text recognition on the displayed content, judging the displayed content and/or the recognized text, and confirming whether there are elements including monitoring information; if the elements of the set monitoring information are monitored, the anti-photography mode is automatically triggered, the area for displaying the watermark information is determined based on the location and area of the elements, and the display of the watermark information is enabled in real time.

The application of this invention fully guarantees the confidentiality and security of the system, and improves the viewing effect and visual experience of the Micro LED display.

■ Maiyun Display: A micro-VCSEL chip packaging structure and its manufacturing method

On February 27, Maiyun Display’s patent for "a micro-VCSEL chip packaging structure and its manufacturing method" entered the review and publication stage.

Its structure includes a carrier substrate, microVCSEL chip, isolation insulation layer and metal interconnection structure; the carrier substrate is selected from Si composite, insulation composite, TGV or insulating transparent substrate. The microVCSEL chip is fixed on the substrate bonding metal through massive transfer, and the isolation layer is used to The insulating layer window and metal interconnection structure realize the transfer of electrodes from the epitaxial structure to the low-cost substrate; the method includes epitaxial wafer preparation, chip miniaturization, mass transfer, insulating layer production and metal interconnection molding. It supports vertical/flip chip, P-side/N-side lighting, and adapts to the needs of multiple scenarios.

The invention avoids the waste of epitaxial materials, significantly reduces costs, while ensuring the electrical performance, optical performance and reliability of the device, and has broad application prospects.

■ Northview Technology: A Micro LED color combination component, module and optical engine

Northview Technology Co., Ltd.’s patent for “a Micro LED color combination component, module and optical engine” has entered the review and publication stage.

The present invention provides a Micro The LED color combination component, module and light machine includes a first light source unit, a second light source unit and a third light source unit. The first, second and third single color packages corresponding to the three light source units are used to respectively provide the first incident light, the second incident light and the third incident light; the second light source unit has a third light source unit. One side of the two flexible circuit boards is connected to the first flexible circuit board of the first light source unit through a connector, and the other side of the second flexible circuit board is connected to the third flexible circuit board of the third light source unit through another connector; the first flexible circuit board, the second flexible circuit board, the third flexible circuit board and the connector are arranged in a stack. The connector can improve the compactness of the connection between the three flexible circuit boards, forming a "sandwich" structure, which is conducive to reducing the size of the combined color components, making the overall combined color components slimmer, and more suitable for use scenarios such as near-eye display devices.

■ Weijiu Optoelectronics: Two Micro LED-related patents have entered the stage of effective authorization, pending publication

Recently, Weijiu Optoelectronics Technology Co., Ltd. has updated the progress of two Micro LED-related patents.

On the one hand, the patent "A method for improving sidewall etching damage of AlGaInP red Micro LED" has entered the effective authorization stage.

The patent includes the following steps: S1, epitaxial cleaning; S2, patterned photolithography; S3, ICP dry etching; S4, S4, wet repair liquid preparation; S5, sidewall damage wet treatment; S6, post-processing; S7, effect characterization; this application is aimed at ICP dry etching to produce a 50100nm sidewall damage layer, causing non-stop damage. Radiation recombination causes low device efficiency, and the existing ALE/ALD technology has high costs or incomplete repairs. A post-processing and characterization process for cleaning, patterned photolithography, ICP etching, weak acid + oxidant wet repair is proposed; the damage layer removal rate after repair is ≥90%, and the photoluminescence peak is increased by ≥25%. No special equipment is required, and it is compatible with Micro The LED mass production process reduces costs and is suitable for AR/VR full-color display and other scenarios, effectively improving the luminous performance of the device.

On the other hand, the patent for "A preparation method for InGaN full-color Micro-LED devices based on ion implantation" has entered the review and publication stage.

It includes preparing red, green and blue InGaN multi-quantum well stacked epitaxial wafers; after defining the pixel pattern through photolithography, injecting specific ions to form a high-resistance insulating layer to achieve electrical isolation of the pixels; etching deep holes to expose the contact areas of the light-emitting layers of each color; depositing the insulating dielectric layer and etching back, preparing electrodes and interconnecting through physical vapor deposition and stripping processes; obtaining the device after thinning, cutting and packaging; The invention uses ion implantation to replace multiple selective etchings, fundamentally reducing quantum well damage, simplifying the process, and improving device luminous efficiency and consistency; the deep-hole vertical electrode structure enhances contact reliability and facilitates high-density integration; the device pixel density can reach 2000-5000PPI, with a yield rate of ≥88%. It is suitable for VR/AR, high-definition display and other scenarios, and has important application value.

■ Haimixing Laser: An adsorption structure for Micro LED chip transfer

Recently, the patent of Haimixing Laser Technology Group Co., Ltd. "An adsorption structure for Micro LED chip transfer" has entered the effective authorization stage.

The announcement shows that the utility model discloses a micro The adsorption structure for LED chip transfer includes a mounting substrate with an adsorption cavity inside, a seal substrate disposed on the mounting substrate, and a seal adsorption head connected to the bottom of the seal substrate. The bottom of the seal adsorption head is provided with an adsorption hole. The seal substrate is provided with a vent hole connected to the adsorption hole and the adsorption cavity. The installation substrate is provided with a threaded hole communicating with the adsorption cavity. The threaded hole is used to install a tracheal joint to connect to an external vacuum device.

The adsorption structure of this utility model has the advantages of simple structure and long service life, and will not cause damage to the chip when adsorbing the chip during the transfer process of the Micro LED chip.